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| S T A6610 S amHop Microelectronics C orp. Nov.24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 7.6A R DS (ON) ( m ) Max 23 @ V G S = 10V 35 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 8 D1 7 D2 6 D2 5 P DIP -8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage G ate-S ource Voltage Drain C urrent-C ontinuous @ T a -P ulsed b a S ymbol VDS VGS 25 C 70 C IDM IS PD T a=70 C TJ, TS TG ID N-Channel 30 20 7.6 6 30 1.7 3 2 -55 to 150 Unit V V A A A A W C Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a Operating J unction and S torage Temperature R ange T a= 25 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 41.5 C /W 1 S T A 6610 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID =7A VGS =4.5V, ID =5A VDS = 15V, VGS = 10V VDS = 10V, ID =7A Min Typ C Max Unit 30 1 10 1.0 1.8 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA uA V m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 3 23 17 23 35 m ohm A S 20 15 620 190 115 DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ PF PF PF S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID = 7A, R L=2.1 ohm, VGS = 10V, RGEN = 6 ohm VDS =15V, ID =7A,VGS =10V VDS =15V, ID =7A,VGS =4.5V VDS =15V, ID = 7A, VGS =10V 13 14.4 40 8.4 13 6.8 1.5 3.5 ns ns ns ns nC nC nC nC S T A6610 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol b Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.8 1.2 V C DRAIN-SOURCE DIODE CHARACTERISTICS VSD Notes a.Surface Mounted on FR4 Board,t 10sec. b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%. c.Guaranteed by design,not subject to production testing. 5 40 VGS=10V 32 VGS=4V VGS=4.5V 20 16 ID, Drain Current(A) ID, Drain Current (A) VGS=3.5V 24 Tj=125 C 12 -55 C 25 C 16 VGS=3V 8 VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3 8 4 0 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 48 1.75 Figure 2. Transfer Characteristics R DS (ON), On-R es is tance Normalized 40 1.60 1.45 1.30 1.15 1.00 0.85 -25 V G S =4.5V ID=5A V G S =10V ID=7A R DS (on) (m ) 32 24 16 8 1 V G S =4.5V V G S =10V 1 8 16 24 32 40 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T A6610 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=7A Is , S ource-drain current (A) 50 10.0 125 C R DS (on) (m ) 40 75 C 30 20 25 C 10 0 125 C 25 C 75 C 0 2 4 6 8 10 1.0 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T A6610 V G S , G ate to S ource V oltage (V ) 900 750 10 8 6 4 2 0 VDS =15V ID=7A C, Capacitance (pF) Ciss 600 450 300 Coss 150 Crss 0 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance 250 S witching T ime (ns ) ID, Drain C urrent (A) Tr F igure 9. G ate C harge 40 10 (O DS N) L im it 100 60 10 R 10m 100 ms s T D(off) Tf T D(on) 11 DC 1s 1 1 V DS =15V ,ID=7A V G S =10V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance () F igure 11.s witching characteris tics V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area 9 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 STA6610 PACKAGE OUTLINE DIMENSIONS PDIP 8 SYMBOL A A1 A2 b c b2 b3 L e D D1 E E1 eA eB MIN .145 .020 .125 .015 .009 .045 .030 .125 .090 .373 .030 .300 .245 .280 .310 INCHES NOM .172 .130 .018 .012 .060 .039 .132 .100 .386 .045 .310 .250 .325 MAX .200 .135 .021 .014 .070 .045 .140 .110 .400 .060 .320 .255 .365 MIN 3.68 0.51 3.18 0.38 0.23 1.14 0.76 3.18 2.29 9.47 0.76 7.62 6.22 7.11 7.87 MILLIMETERS NOM MAX 4.37 5.08 3.30 3.43 0.46 0.53 0.30 0.36 1.52 1.78 0.99 1.14 3.35 3.56 2.54 2.79 9.80 10.16 1.14 1.52 7.87 8.13 6.35 6.48 8.26 9.27 6 |
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